A Wafer Level Vacuum Encapsulated Capacitive Accelerometer Fabricated in an Unmodified Commercial MEMS Process

نویسندگان

  • Adel Merdassi
  • Peng Yang
  • Vamsy P. Chodavarapu
چکیده

We present the design and fabrication of a single axis low noise accelerometer in an unmodified commercial MicroElectroMechanical Systems (MEMS) process. The new microfabrication process, MEMS Integrated Design for Inertial Sensors (MIDIS), introduced by Teledyne DALSA Inc. allows wafer level vacuum encapsulation at 10 milliTorr which provides a high Quality factor and reduces noise interference on the MEMS sensor devices. The MIDIS process is based on high aspect ratio bulk micromachining of single-crystal silicon layer that is vacuum encapsulated between two other silicon handle wafers. The process includes sealed Through Silicon Vias (TSVs) for compact design and flip-chip integration with signal processing circuits. The proposed accelerometer design is sensitive to single-axis in-plane acceleration and uses a differential capacitance measurement. Over ±1 g measurement range, the measured sensitivity was 1 fF/g. The accelerometer system was designed to provide a detection resolution of 33 milli-g over the operational range of ±100 g.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Sputtered Encapsulation as Wafer Level Packaging for Isolatable MEMS Devices: A Technique Demonstrated on a Capacitive Accelerometer

This paper discusses sputtered silicon encapsulation as a wafer level packaging approach for isolatable MEMS devices. Devices such as accelerometers, RF switches, inductors, and filters that do not require interaction with the surroundings to function, could thus be fully encapsulated at the wafer level after fabrication. A MEMSTech 50g capacitive accelerometer was used to demonstrate a sputter...

متن کامل

A Monolithic Three-Axis Accelerometer with Wafer- Level Package by CMOS MEMS Process

This paper presents a monolithic three-axis accelerometer with wafer-level package by CMOS MEMS process. The compositions of the microstructure are selected from CMOS layers in order to suppress the in-plane and out-of-plane bending deflection caused by the residual stresses in multiple layers. A switched-capacitor sensing circuit with a trimming mechanism is used to amplify the capacitive sign...

متن کامل

Packaging-compatible wafer level capping of MEMS devices

0167-9317/$ see front matter 2012 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2012.11.010 ⇑ Corresponding author. E-mail address: [email protected] (P.A. Kohl). A cost-effective, wafer-level package process for microelectromechanical devices (MEMS) is presented. The movable part of MEMS device is encapsulated and protected while in wafer form so that commodity, lead-frame packaging can be use...

متن کامل

A 1 mG lateral CMOS-MEMS accelerometer

This paper reports a lateral CMOS-MEMS accelerometer with a measured noise floor of 1mG/ and a dynamic range larger than 13G. The accelerometer is fully compatible with conventional CMOS processes enabling the integration of most of the conditioning circuits. It is fabricated in a three metal layer 0.5μm CMOS process followed by a two-step dry etch release. An improved curl matching technique i...

متن کامل

Fabrication and Characterization of a New MEMS Capacitive Microphone using Perforated Diaphragm

In this paper, a novel single-chip MEMS capacitive microphone is presented. The novelties of this method relies on the moveable aluminum (Al) diaphragm positioned over the backplate electrode, where the diaphragm includes a plurality of holes to allow the air in the gap between the electrode and diaphragm to escape and thus reduce acoustical damping in the microphone. Spin-on-glass (SOG) was us...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 15  شماره 

صفحات  -

تاریخ انتشار 2015